Position: Home  > All Categories> Integrated Circuits (ICs) > APT10026RKVR

APT10026RKVR

Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular TO-220 PackageSpecifications Symbol Parameter APT10026RKVR UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25°C 0.48 Amps IDM Pulsed Drain Curr...

product image

APT10026RKVR Picture
See larger image
SeekIC No. : 004287036 Detail

APT10026RKVR: Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular TO-220 PackageSpecifications Symbol Parameter APT10026RKVR UNIT VDSS Drain-Source Vo...

APT10026RKVR Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
APT10026RKVR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-220 Package


Specifications

Symbol Parameter APT10026RKVR UNIT
VDSS Drain-Source Voltage 1000 Volts
ID Continuous Drain Current @ TC = 25°C 0.48 Amps
IDM Pulsed Drain Current 1 1.92
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25°C 31 Watts
Linear Derating Factor .25 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 °C
TL Lead Temperature: 0.063" from Case for 10 Sec 300
IAR Avalanche Current 1 (Repetitive and Non-Repetitive) TBD Amps
EAR Repetitive Avalanche Energy1 TBD mJ
EAS Singe Pulse Avalanche Energy 4 TBD



Description

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Resistors
A101G
3006P-1-205LF
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Tapes, Adhesives
803
AC452-2
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
View more