Features: • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK PackageSpecifications Symbol Parameter APT1003RBLL_SLL UNIT VDSS Drain-Sou...
APT1003RSLL: Features: • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • TO-247 or Surface...
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package
| Symbol | Parameter | APT1003RBLL_SLL | UNIT |
| VDSS | Drain-Source Voltage | 1000 | Volts |
| ID | Continuous Drain Current @ Tc = 25 °C |
4 | Amps |
| IDM | Pulsed Drain Current |
16 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25 | 139 | Watts |
| Linear Derati | 1.11 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
4 | Amps |
| EAR | Repetitive Avalanche Energy | 10 | mJ |
| EAS | Single Pulse Avalanche Energy | 425 |