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APT10045B2FLLG

MOSFET N-CH 1000V 23A T-MAX

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SeekIC No. : 003430525 Detail

APT10045B2FLLG: MOSFET N-CH 1000V 23A T-MAX

APT10045B2FLLG Data Sheet

floor Price/Ceiling Price

US $ 9.51~15.86 / Piece | Get Latest Price
Part Number:
APT10045B2FLLG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $15.86
  • $14.67
  • $12.49
  • $11.5
  • $10.9
  • $10.31
  • $9.99
  • $9.71
  • $9.51
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 23A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 460 mOhm @ 11.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 154nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 4350pF @ 25V
Power - Max: 565W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX? [B2]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 23A
Drain to Source Voltage (Vdss): 1000V (1kV)
Gate Charge (Qg) @ Vgs: 154nC @ 10V
Manufacturer: Microsemi Power Products Group
Input Capacitance (Ciss) @ Vds: 4350pF @ 25V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Series: POWER MOS 7®
Power - Max: 565W
Rds On (Max) @ Id, Vgs: 460 mOhm @ 11.5A, 10V


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