APT100GN120J

IGBT 1200V 153A 446W SOT227

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SeekIC No. : 004131742 Detail

APT100GN120J: IGBT 1200V 153A 446W SOT227

floor Price/Ceiling Price

US $ 12.53~20.87 / Piece | Get Latest Price
Part Number:
APT100GN120J
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $20.87
  • $19.31
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  • $14.35
  • $13.57
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  • $12.79
  • $12.53
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Upload time: 2024/4/24

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
IGBT Type: Trench and Field Stop Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector (Ic) (Max): 153A Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V Maximum Operating Temperature : + 245 C
Power - Max: 446W Input: Standard
NTC Thermistor: No Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC    

Description

Configuration: Single
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Voltage - Collector Emitter Breakdown (Max): 1200V
Series: -
Manufacturer: Microsemi Power Products Group
IGBT Type: Trench and Field Stop
Current - Collector Cutoff (Max): 100µA
Supplier Device Package: ISOTOP?
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector (Ic) (Max): 153A
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Power - Max: 446W


Features:

• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability



Application

Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS


Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage 1200 Volts
VGE Gate-Emitter Voltage ± 30 Volts
IC Continuous Collector Current @ TC = 25°C 153 Amps
IC Continuous Collector Current @ TC = 110°C 70 Amps
ICM Pulsed Collector Current 1 300 Amps
SSOA Switching Safe Operating Area @ TJ = 150°C 150A @ 1200V  
PD Total Power Dissipation 446 Watts
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 °C
Tj
Tstg
Operating and Storage Junction Temperature Range -55 to 150 °C



Description

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's APT100GN120J have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.




Parameters:

Technical/Catalog InformationAPT100GN120J
VendorMicrosemi
CategoryTransistors, FETs, IGBTs
Mounting TypeScrew Mount
Package NameISOTOP
IGBT TypePT (Punch Through)
Collector Emitter Voltage (Vces)1200.0 [Max]
Typical Vce(on) @ Vge, Ic2.1V @ 15V, 100A
Gate Emitter Voltage (Vge)30 [Max]
Collector Current (Ic)153.00 A [Max]
Collector Peak Current (Icm)300.000 A [Nom]
Power Dissipation446.000 W [Max]
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT100GN120J
APT100GN120J



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