Position: Home > Datasheet list > APT Series > Index A > APT100GN60B2G
Electronica China

Purchase APT100GN60B2G, In-stock APT100GN60B2G From SeekIC.

MFG:Microsemi-PPG  Category:Discrete Semiconductor Products  

APT100GN60B2G Product Image

APT Series Datasheet download

Five Points

Part Number: APT100GN60B2G

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

 

 

Descriptions: IGBT 229A 600V T-MAX

Price Break

30

Unit Price

9.38400

Extended Price

281.52

(All prices are in USD) Prices for reference only
Urgent Purchase

APT100GN60B2G General Description

IGBT 229A 600V T-MAX

APT100GN60B2G Parameters

Technical/Catalog InformationAPT100GN60B2G
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)229A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 100A
Power - Max625W
Mounting TypeThrough Hole
Package / CaseT-MAX
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT100GN60B2G
APT100GN60B2G

APT100GN60B2G datasheet

APT100GN60B2G
PDF/DataSheet Download

Find APT100GN60B2G Suppliers

  • ·APT1001
  • ADPOW [Advanced Power Technology] 
  • Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 
  • 36626 KB
  • APT1001 Datasheet Download
  • ·APT1001R1AN
  •  
  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3  
  • 214276 KB
  • APT1001R1AN Datasheet Download
  • ·APT1001R1AVR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 
  • 69982 KB
  • APT1001R1AVR Datasheet Download
  • ·APT1001R1BN
  • ADPOW [Advanced Power Technology] 
  • N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 
  • 53353 KB
  • APT1001R1BN Datasheet Download
  • ·APT1001R1BVFR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 
  • 72323 KB
  • APT1001R1BVFR Datasheet Download
  • ·APT1001R1DN
  •  
  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP  
  • 395046 KB
  • APT1001R1DN Datasheet Download
  • ·APT1001R1HN
  •  
  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO  
  • 227320 KB
  • APT1001R1HN Datasheet Download
  • ·APT1001R1HVR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 
  • 68546 KB
  • APT1001R1HVR Datasheet Download

APT100GN60B2G Relative Products

  • APT100GN60B2

    APT100GN60B2

    Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's APT100GN60B2 have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter di...

  • APT100GN120J

    APT100GN120J

    Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's APT100GN120J have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter di...

  • APT100GN120B2G

    APT100GN120B2G

    MOSFET N-CH 1200V 245A T-MAX

  • APT100GF60LR

    APT100GF60LR

  • APT100GF60JU3

    APT100GF60JU3

  • APT100GF60JU2

    APT100GF60JU2

Hotspot Suppliers Product

  • Models: 7MBP150KB060-03
Price: 36-60 USD

    7MBP150KB060-03

    Price: 36-60 USD

    Intelligent Power Module, 0 to 450V, 1 mA, Short circuit protection circuit

  • Models: LM2576HVT-ADJ
Price: 0.5-0.7 USD

    LM2576HVT-ADJ

    Price: 0.5-0.7 USD

    regulator, 3A, TO220-5, 1.23 V ~ 57 V, 52kHz, RoHS Compliant, LM2576HVT-ADJ

  • Models: HY5DU121622CTP-D43
Price: 4.02-4.08 USD

    HY5DU121622CTP-D43

    Price: 4.02-4.08 USD

    512Mb, DDR SDRAM, TSSOP66, -1.0 to 3.6 V Voltage, 50 mA Output Short Circuit Current

  • Models: TMS320F2812PGFQ
Price: 0.1-0.1 USD

    TMS320F2812PGFQ

    Price: 0.1-0.1 USD

    Digital signal processors, LQFP-176, Three 32-Bit CPU-Timers, 150 MHz, Low-Power, Atomic Operations

  • Models: VY22549-3
Price: 2-3.4 USD

    VY22549-3

    Price: 2-3.4 USD

    VY22549-3, BGA, Philips

  • Models: BSM75GB120DN
Price: 34-40 USD

    BSM75GB120DN

    Price: 34-40 USD

    IGBT Power Module, Infineon Technologies AG, Half-bridge, 1200V, insulated metal base plate, 105A

  • Models: ISO7240ADWR
Price: 1.83-2.06 USD

    ISO7240ADWR

    Price: 1.83-2.06 USD

    quad-channel digital isolator, 2.5KVRMS, 16-SOIC, 110ns, 1Mbps, RoHS Compliant, – 0.5 to 6 V

  • Models: TLV1544CDR
Price: 2.15-2.38 USD

    TLV1544CDR

    Price: 2.15-2.38 USD

    CMOS switched-capacitor, 10-BIT, 87KSPS, 16-SOIC, –0.5 V to 6.5 V, ±20 mA

  • Models: LM3881MME+
Price: 0.58-0.79 USD

    LM3881MME+

    Price: 0.58-0.79 USD

    8MSOP, Power Sequencer, -0.3V to +6.0V, 80 μA, LM3881MME+, National Semiconductor

  • Models: DAC904E
Price: 3-3.5 USD

    DAC904E

    Price: 3-3.5 USD

    14-Bit, 165MSPS, digital-to-analog converter, SSOP28, high sfdr, low glitch, low power, single +5V...

  • Models: BLF147
Price: 96-110 USD

    BLF147

    Price: 96-110 USD

    High power gain, Low intermodulation distortion, VHF power MOS transistor, SOT121B, 65V

  • Models: ER1006FCT
Price: 0.2-0.3 USD

    ER1006FCT

    Price: 0.2-0.3 USD

    superfast recovery rectifier, To-220AB, Low forwrd voltge, high current capability, 600V

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All