Purchase APT100GT120JU3, In-stock APT100GT120JU3 From SeekIC.
- Table of contents:
APT100GT120JU3
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Suppliers
DataSheet
General Description
APT100GT120JU3 Maximum Ratings
| Symbol | Parameter | Max ratings | Unit | ||
| VCES | Collector - Emitter Breakdown Voltage | 1200 | V | ||
| IC1 | Continuous Collector Current | TC = 25°C | 140 | A | |
| IC2 | TC = 100°C | 100 | A | ||
| ICM | Pulsed Collector Current | TC = 25°C | 280 | A | |
| VGE | Gate Emitter Voltage | ±20 | V | ||
| PD | Maximum Power Dissipation | TC = 25°C | 480 | W | |
| IFAV | Maximum Average Forward Current | Duty cycle=0.5 | TC = 80°C | 27 | A |
| IFRMS | RMS Forward Current (Square wave, 50% duty) | 34 | A | ||
APT100GT120JU3 Features
· Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current·
- Avalanche energy rated
- RBSOA and SCSOA rated
· ISOTOP® Package (SOT-227)
· Very low stray inductance
· High level of integration
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current·
- Avalanche energy rated
- RBSOA and SCSOA rated
· ISOTOP® Package (SOT-227)
· Very low stray inductance
· High level of integration
APT100GT120JU3 Typical Application
· AC and DC motor control
· Switched Mode Power Supplie
· Switched Mode Power Supplie
APT100GT120JU3
PDF/DataSheet Download
- Datasheet: APT100GT120JU3
- File Size: 623434 KB
- Manufacturer: ADPOW
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
- 36626 KB
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
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