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MFG:Microsemi-PPG Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

Descriptions: DIODE SCHOTTKY 200V TO264

Price Break

1
25
100
500
1000
5000
10000

Unit Price

16.04000
13.75200
10.88700
10.02750
8.59500
7.73550
7.16250

Extended Price

16.04
343.80
1088.70
5013.75
8595.00
38677.50
71625.00

(All prices are in USD) Prices for reference only

DIODE SCHOTTKY 200V TO264

Technical/Catalog Information	APT100S20LCTG
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Diode Type	Schottky
Diode Configuration	1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)	200V
Current - Average Rectified (Io) (per Diode)	120A
Voltage - Forward (Vf) (Max) @ If	950mV @ 100A
Current - Reverse Leakage @ Vr	2mA @ 200V
Reverse Recovery Time (trr)	70ns
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-264
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT100S20LCTG APT100S20LCTG APT100S20LCTGMI ND APT100S20LCTGMIND APT100S20LCTGMI

APT1001
PDF/DataSheet Download

·APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
214276 KB
·APT1001R1AVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
69982 KB
·APT1001R1BN
ADPOW [Advanced Power Technology]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
53353 KB
·APT1001R1BVFR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
72323 KB
·APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
395046 KB
·APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
227320 KB
·APT1001R1HVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
68546 KB
·APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
247344 KB

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