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APT11N80BC3G

MOSFET N-CH 800V 11A TO-247

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SeekIC No. : 003430385 Detail

APT11N80BC3G: MOSFET N-CH 800V 11A TO-247

APT11N80BC3G Data Sheet

floor Price/Ceiling Price

US $ 1.62~3.67 / Piece | Get Latest Price
Part Number:
APT11N80BC3G
Mfg:
Supply Ability:
5000

Price Break

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  • 10~100
  • 100~250
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  • Unit Price
  • $3.67
  • $3.28
  • $2.69
  • $2.42
  • $2.17
  • $1.83
  • $1.74
  • $1.67
  • $1.62
  • Processing time
  • 15 Days
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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 800V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 11A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.9V @ 680µA Gate Charge (Qg) @ Vgs: 60nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1585pF @ 25V
Power - Max: 156W Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 800V
Manufacturer: Microsemi Power Products Group
Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Input Capacitance (Ciss) @ Vds: 1585pF @ 25V
Power - Max: 156W
Supplier Device Package: TO-247 [B]


Parameters:

Technical/Catalog InformationAPT11N80BC3G
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs450 mOhm @ 7.1A, 10V
Input Capacitance (Ciss) @ Vds 1585pF @ 25V
Power - Max156W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT11N80BC3G
APT11N80BC3G
APT11N80BC3GMI ND
APT11N80BC3GMIND
APT11N80BC3GMI



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