APT18M80B

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 19A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 800V
Gate Charge (Qg) @ Vgs: 120nC @ 10V
Power - Max: 500W
Vgs(th) (Max) @ Id: 5V @ 1mA
Input Capacitance (Ciss) @ Vds: 3760pF @ 25V
Manufacturer: Microsemi Power Products Group
Series: POWER MOS 8™
Supplier Device Package: TO-247 [B]
Rds On (Max) @ Id, Vgs: 530 mOhm @ 9A, 10V


Features:

• Fast switching with low EMI/RFI
• Low R_DS(on)
• Ultra low C_rss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant

Application

• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters


Specifications

Symbol	Parameter	Ratings	Unit
ID	Continuous Drain Current @ TC = 25°C	18	A
	Continuous Drain Current @ TC = 100°C	12
IDM	Pulsed Drain Current 1	70
VGS	Gate-Source Voltage	±30	V
EAS	Single Pulse Avalanche Energy 2	795	mJ
IAR	Avalanche Current, Repetitive or Non-Repetitive	9	A

Description

Power MOS 8™ APT18M80B is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low C_rss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

Parameters:

Technical/Catalog Information	APT18M80B
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	560 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	3760pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT18M80B APT18M80B