APT20N60BC3G

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) @ Vgs: 114nC @ 10V
Manufacturer: Microsemi Power Products Group
Series: CoolMOS™
Power - Max: 208W
Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Current - Continuous Drain (Id) @ 25° C: 20.7A
Input Capacitance (Ciss) @ Vds: 2440pF @ 25V


Parameters:

Technical/Catalog Information	APT20N60BC3G
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	20.7A
Rds On (Max) @ Id, Vgs	190 mOhm @ 13.1A, 10V
Input Capacitance (Ciss) @ Vds	2440pF @ 25V
Power - Max	208W
Packaging	Tube
Gate Charge (Qg) @ Vgs	114nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT20N60BC3G APT20N60BC3G