APT28F60B

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 140nC @ 10V
Package / Case: TO-247-3
Power - Max: 520W
Vgs(th) (Max) @ Id: 5V @ 1mA
Manufacturer: Microsemi Power Products Group
Supplier Device Package: TO-247 [B]
Rds On (Max) @ Id, Vgs: 250 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds: 5575pF @ 25V


Features:

• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant


Application

• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback


Specifications

Symbol	Parameter	Ratings	Unit
ID	Continuous Drain Current @ TC = 25°C	28	A
	Continuous Drain Current @ TC = 100°C	18
IDM	Pulsed Drain Current 1	105
VGS	Gate-Source Voltage	±30	V
EAS	Single Pulse Avalanche Energy 2	780	mJ
IAR	Avalanche Current, Repetitive or Non-Repetitive	14	A

Parameters:

Technical/Catalog Information	APT28F60B
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	28A
Rds On (Max) @ Id, Vgs	250 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds	5575pF @ 25V
Power - Max	520W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT28F60B APT28F60B APT28F60BMI ND APT28F60BMIND APT28F60BMI