APT29F80J

MOSFET N-CH 800V 31A SOT-227

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SeekIC No. : 004130700 Detail

APT29F80J: MOSFET N-CH 800V 31A SOT-227

floor Price/Ceiling Price

US $ 13.44~22.4 / Piece | Get Latest Price
Part Number:
APT29F80J
Mfg:
Supply Ability:
5000

Price Break

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  • 10~100
  • 100~250
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  • Unit Price
  • $22.4
  • $20.72
  • $17.64
  • $16.24
  • $15.4
  • $14.56
  • $14.11
  • $13.72
  • $13.44
  • Processing time
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Upload time: 2024/4/25

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Product Details

Quick Details

Series: POWER MOS 8™ Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25° C: 31A
Interface Type : Ethernet, I2C, SPI, UART, USB Rds On (Max) @ Id, Vgs: 210 mOhm @ 24A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 303nC @ 10V
Input Capacitance (Ciss) @ Vds: 9326pF @ 25V Power - Max: 543W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP?
Current - Continuous Drain (Id) @ 25° C: 31A
Series: POWER MOS 8™
Drain to Source Voltage (Vdss): 800V
Gate Charge (Qg) @ Vgs: 303nC @ 10V
Input Capacitance (Ciss) @ Vds: 9326pF @ 25V
Power - Max: 543W
Rds On (Max) @ Id, Vgs: 210 mOhm @ 24A, 10V


Parameters:

Technical/Catalog InformationAPT29F80J
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C29A
Rds On (Max) @ Id, Vgs460 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 8500pF @ 25V
Power - Max1040W
PackagingTube
Gate Charge (Qg) @ Vgs260nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT29F80J
APT29F80J



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