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MFG:Microsemi-PPG Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

Descriptions: DIODE DUAL PAR 60A 600V SOT-227

Price Break

1
25
100
500
1000
5000
10000

Unit Price

23.07000
19.77600
15.65600
14.42000
12.36000
11.12400
10.30000

Extended Price

23.07
494.40
1565.60
7210.00
12360.00
55620.00
103000.00

(All prices are in USD) Prices for reference only

DIODE DUAL PAR 60A 600V SOT-227

Technical/Catalog Information	APT2X61DQ60J
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Diode Type	Standard
Diode Configuration	2 Independent
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io) (per Diode)	60A
Voltage - Forward (Vf) (Max) @ If	2.3V @ 60A
Current - Reverse Leakage @ Vr	25A @ 600V
Reverse Recovery Time (trr)	70ns
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Chassis Mount
Package / Case	SOT-227
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT2X61DQ60J APT2X61DQ60J APT2X61DQ60JMI ND APT2X61DQ60JMIND APT2X61DQ60JMI

APT1001
PDF/DataSheet Download

·APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
214276 KB
·APT1001R1AVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
69982 KB
·APT1001R1BN
ADPOW [Advanced Power Technology]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
53353 KB
·APT1001R1BVFR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
72323 KB
·APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
395046 KB
·APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
227320 KB
·APT1001R1HVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
68546 KB
·APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
247344 KB

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