Purchase APT2x61DQ100J, In-stock APT2x61DQ100J From SeekIC.
- Table of contents:
APT2x61DQ100J
-
Suppliers
DataSheet
General Description
APT2x61DQ100J Maximum Ratings
| Symbol | Characteristic / Test Conditions | APT30DQ100B_S(G) | UNIT |
| VR VRRM VRWM |
Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage |
1000 | Volts |
| IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL |
Maximum Average Forward Current (TC = 120°C, Duty Cycle = 0.5 ) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec. |
60 77 540 20 -55 to 175 300 |
Amps mJ °C |
APT2x61DQ100J Features
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
• Avalanche Energy Rated
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
• Avalanche Energy Rated
APT2x61DQ100J Typical Application
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifiers
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifiers
APT1001
PDF/DataSheet Download
- Datasheet: APT1001
- File Size: 36626 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
- ·APT1001R1SN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
- 247344 KB
APT2x61DQ100J Relative Products
APT2X61D60J
DIODE DUAL PAR 60A 600V SOT-227
APT2X61D40J
DIODE DUAL PAR 60A 400V SOT-227
APT2X61D30J
DIODE DUAL PAR 60A 300V SOT-227
APT2X61D20J
DIODE DUAL 60A 200V SOT-227
APT2X61D120J
DIODE DUAL PAR 53A 1200V SOT-227
APT2X61D100J
DIODE DUAL PAR 55A 1000V SOT-227
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