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MFG:Microsemi-PPG Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

Descriptions: DIODE ULT FAST 2X30A 200V TO-247

Price Break

1
25
100
500
1000
5000
10000

Unit Price

8.84000
7.95600
6.63000
5.52500
4.42000
3.09400
2.87300

Extended Price

8.84
198.90
663.00
2762.50
4420.00
15470.00
28730.00

(All prices are in USD) Prices for reference only

DIODE ULT FAST 2X30A 200V TO-247

Technical/Catalog Information	APT30D20BCAG
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Diode Type	Standard
Diode Configuration	1 Pair Common Anode
Voltage - DC Reverse (Vr) (Max)	200V
Current - Average Rectified (Io) (per Diode)	30A
Voltage - Forward (Vf) (Max) @ If	1.3V @ 30A
Current - Reverse Leakage @ Vr	250A @ 200V
Reverse Recovery Time (trr)	24ns
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-247
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT30D20BCAG APT30D20BCAG APT30D20BCAGMI ND APT30D20BCAGMIND APT30D20BCAGMI

APT1001
PDF/DataSheet Download

·APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
214276 KB
·APT1001R1AVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
69982 KB
·APT1001R1BN
ADPOW [Advanced Power Technology]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
53353 KB
·APT1001R1BVFR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
72323 KB
·APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
395046 KB
·APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
227320 KB
·APT1001R1HVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
68546 KB
·APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
247344 KB

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