Purchase APT30D40HCT, In-stock APT30D40HCT From SeekIC.
MFG:APT D/C:`06+(pb-free)
- Table of contents:
APT30D40HCT
-
Suppliers
DataSheet
General Description
APT30D40HCT Maximum Ratings
| Symbol | Characteristic / Test Conditions | APT30D40HCT | UNIT |
| VR | Maximum D.C. Reverse Voltage | 400 | Volts |
| VRRM | Maximum Peak Repetitive Reverse Voltage | ||
| VRWM | Maximum Working Peak Reverse Voltage | ||
| IF(AV) | Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5) | 30 | Amps |
| IF(RMS) | RMS Forward Current(Square wave, 50% duty) | 70 | |
| IFSM | Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) | 320 | |
| TJ,TSTG | Operating and StorageTemperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec | 300 |
APT30D40HCT Features
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Hermetic TO-258 Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
• Soft Recovery Characteristics
• Hermetic TO-258 Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
APT30D40HCT Typical Application
Parallel Diode-Switchmode Power Supply-Inverters
Free Wheeling Diode-Motor Controllers-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
Free Wheeling Diode-Motor Controllers-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
APT30D40HCT
PDF/DataSheet Download
- Datasheet: APT30D40HCT
- File Size: 59676 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
- 36626 KB
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
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