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MFG:Microsemi-PPG Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

Descriptions: DIODE ULT FAST 30A 1200V TO-220

Price Break

1
25
100
500
1000
5000
10000

Unit Price

4.08000
3.67200
3.06000
2.55000
2.04000
1.42800
1.32600

Extended Price

4.08
91.80
306.00
1275.00
2040.00
7140.00
13260.00

(All prices are in USD) Prices for reference only

DIODE ULT FAST 30A 1200V TO-220

Technical/Catalog Information	APT30DQ120KG
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1200V (1.2kV)
Current - Average Rectified (Io)	30A
Voltage - Forward (Vf) (Max) @ If	3.3V @ 30A
Reverse Recovery Time (trr)	320ns
Current - Reverse Leakage @ Vr	100A @ 1200V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220
Packaging	Tube
Capacitance @ Vr, F	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT30DQ120KG APT30DQ120KG APT30DQ120KGMI ND APT30DQ120KGMIND APT30DQ120KGMI

APT1001
PDF/DataSheet Download

·APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
214276 KB
·APT1001R1AVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
69982 KB
·APT1001R1BN
ADPOW [Advanced Power Technology]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
53353 KB
·APT1001R1BVFR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
72323 KB
·APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
395046 KB
·APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
227320 KB
·APT1001R1HVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
68546 KB
·APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
247344 KB

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