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Part Number: APT30M40JVFR

 

MFG: APT

Package Cooled: ISOTOP?/FONT>

D/C: `06+(pb-free)

Description: Power MOS V® is a new generation of high voltage N-Channel enhancement ode power MOSFETs. This new...


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APT30M40JVFR General Description


Power MOS V® is a new generation of high voltage N-Channel enhancement ode power MOSFETs. This new technology minimizes the JFET effect, ncreases packing density and reduces the on-resistance. Power MOS V® lso achieves faster switching speeds through optimized gate layout.

APT30M40JVFR Maximum Ratings

Symbol Parameter APT30M40JVR UNIT
VDSS Drain-Source Voltage 300 Volts
ID Continuous Drain Current @ TC = 25°C 70 Amps
IDM Pulsed Drain Current 280
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25°C 450 Watts
Linear Derating Factor 3.6 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR Avalanche Current (Repetitive and Non-Repetitive) 70 Amps
EAR Repetitive Avalanche Energy 50 mJ
EAS Single Pulse Avalanche Energy 2500

APT30M40JVFR Features

• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
• Faster Switching

APT30M40JVFR datasheet

APT30M40JVFR
PDF/DataSheet Download

  • Datasheet: APT30M40JVFR
  • File Size: 74925 KB
  • Manufacturer: ADPOW [Advanced Power Technology]
  • Click here to Download

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