Purchase APT30M40JVR, In-stock APT30M40JVR From SeekIC.
MFG:APT Package Cooled:ISOTOP?/FONT> D/C:`06+(pb-free)
Part Number: APT30M40JVR
MFG: APT
Package Cooled: ISOTOP?/FONT>
D/C: `06+(pb-free)
- Table of contents:
APT30M40JVR
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Suppliers
DataSheet
General Description
APT30M40JVR Maximum Ratings
| Symbol | Parameter | APT30M40JVR | UNIT |
| VDSS | Drain-Source Voltage | 300 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 70 | Amps |
| IDM | Pulsed Drain Current | 280 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 450 | Watts |
| Linear Derating Factor | 3.6 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 70 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 2500 |
APT30M40JVR
PDF/DataSheet Download
- Datasheet: APT30M40JVR
- File Size: 63509 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
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- ·APT1001R1AVR
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- ·APT1001R1BN
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- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
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- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
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- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
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- ·APT1001R1HVR
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- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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