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Part Number: APT30M40LVFR

 

MFG: APT

 

D/C: 08+

Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE...


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APT30M40LVFR General Description


Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT30M40LVFR Maximum Ratings

Symbol Parameter
APT30M40LVFR
UNIT
VDSS Drain-Source Voltage
300
Volts
ID Continuous Drain Current @ TC = 25
76
Amps
IDM Pulsed Drain Current
304
VGS Gate-Source Voltage Continuous
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
520
Watts
Linear Derating Factor
4.16
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-Repetitive)
76
Amps
EAR Repetitive Avalanche Energy
50
mJ
EAS Single Pulse Avalanche Energy
2500




APT30M40LVFR Features

• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-264 Package
• Faster Switching

APT30M40LVFR datasheet

APT30M40LVFR
PDF/DataSheet Download

  • Datasheet: APT30M40LVFR
  • File Size: 67728 KB
  • Manufacturer: ADPOW [Advanced Power Technology]
  • Click here to Download

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