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APT30M90AVR

Specifications Symbol Parameter UNIT APT30M90AVR VDSS Drain-Source Voltage Volts 300 ID Continuous Drain Current @ TC = 25°C 33 Amps IDM Pulsed Drain Current 1 132 VGS Gate-Source Voltage Continuous ±30 Volts VGSM Gate-Source Voltage Transient ±40 PD Total...

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SeekIC No. : 004287315 Detail

APT30M90AVR: Specifications Symbol Parameter UNIT APT30M90AVR VDSS Drain-Source Voltage Volts 300 ID Continuous Drain Current @ TC = 25°C 33 Amps IDM Pulsed Drain Current 1 132 VGS ...

APT30M90AVR Data Sheet

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Part Number:
APT30M90AVR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol


 Parameter UNIT APT30M90AVR
VDSS


 Drain-Source Voltage Volts 300
ID
Continuous Drain Current @ TC = 25°C
 33 Amps
IDM
Pulsed Drain Current 1

 132
VGS
Gate-Source Voltage Continuous
 ±30 Volts
VGSM
Gate-Source Voltage Transient

 ±40
PD
 Total Power Dissipation @ TC = 25°C

 235 Watts
Linear Derating Factor

 1.88 W/°C
TJ,TSTG
Operating and Storage Junction Temperature Range
 -55 to 150 °C
TL
Lead Temperature: 0.063" from Case for 10 Sec.
 300
IAR Avalanche Current 1 (Repetitive and Non-Repetitive)
 33 Amps
EAR Repetitive Avalanche Energy 30 mJ
EAS
Single Pulse Avalanche Energy
1300



Description

Power MOS V® APT30M90AVR is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V®also achieves faster switching speeds through optimized gate layout.TO-3


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