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MFG:APT D/C:07+(pb-free)
- Table of contents:
APT33GF120B2RD
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Suppliers
DataSheet
General Description
APT33GF120B2RD Maximum Ratings
| Symbol | Parameter | APT33GF120B2RD/LRD | UNIT |
| VCES | Collector-Emitter Voltage | 1200 | Volts |
| VCGR | Collector-Gate Voltage (RGE = 20KΩ) | 1200 | |
| VGE | Gate-Emitter Voltage | 20 | |
| IC1 | Continuous Collector Current @ TC = 25°C | 52 | Amps |
| IC2 | Continuous Collector Current @ TC = 90°C | 33 | |
| ICM1 | Pulsed Collector Current @ TC = 25°C | 104 | |
| ICM2 | Pulsed Collector Current @ TC = 90°C | 66 | |
| PD | Total Power Dissipation | 300 | Watts |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. | 300 |
APT33GF120B2RD
PDF/DataSheet Download
- Datasheet: APT33GF120B2RD
- File Size: 145234 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
- 36626 KB
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
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