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MFG:Microsemi-PPG Category:Discrete Semiconductor Products

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Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

Descriptions: IGBT/MOSFET 1200V 64A TO-264

Price Break

1
25
100
500
1000
5000
10000

Unit Price

19.40000
16.63200
13.16700
12.12750
10.39500
9.35550
8.66250

Extended Price

19.40
415.80
1316.70
6063.75
10395.00
46777.50
86625.00

(All prices are in USD) Prices for reference only

IGBT/MOSFET 1200V 64A TO-264

Technical/Catalog Information	APT33GF120LRDQ2G
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	64A
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 25A
Power - Max	357W
Mounting Type	Through Hole
Package / Case	TO-264
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT33GF120LRDQ2G APT33GF120LRDQ2G APT33GF120LRDQ2GMI ND APT33GF120LRDQ2GMIND APT33GF120LRDQ2GMI

APT1001
PDF/DataSheet Download

·APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
214276 KB
·APT1001R1AVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
69982 KB
·APT1001R1BN
ADPOW [Advanced Power Technology]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
53353 KB
·APT1001R1BVFR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
72323 KB
·APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
395046 KB
·APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
227320 KB
·APT1001R1HVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
68546 KB
·APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
247344 KB

APT33GF120LRD
APT33GF120HR
The Fast IGBT APT33GF120HRis a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
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