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MFG:Microsemi-PPG Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

Descriptions: IGBT 1200V 94A TO-247

Price Break

1
25
100
500
1000
5000
10000

Unit Price

9.72000
8.32800
6.59300
6.07250
5.20500
4.68450
4.33750

Extended Price

9.72
208.20
659.30
3036.25
5205.00
23422.50
43375.00

(All prices are in USD) Prices for reference only

IGBT 1200V 94A TO-247

Technical/Catalog Information	APT35GN120BG
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT35GN120BG APT35GN120BG APT35GN120BGMI ND APT35GN120BGMIND APT35GN120BGMI

APT1001
PDF/DataSheet Download

·APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
214276 KB
·APT1001R1AVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
69982 KB
·APT1001R1BN
ADPOW [Advanced Power Technology]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
53353 KB
·APT1001R1BVFR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
72323 KB
·APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
395046 KB
·APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
227320 KB
·APT1001R1HVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
68546 KB
·APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
247344 KB

APT35GA90BD15
MOSFET 900V 63A TO-247
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The absolute maximum ratings of the APT3530BN are: (1)drain-source voltage: 350Volts; (2)continuous drain current: 18.5Amps; (3)pulsed drain current: 75Amps; (4)gate-source voltage: ±30Volts; (5)total power dissipation @ Tc=25, derate above 25: 240Watts; (6)...
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The Fast IGBT APT33GF120HRis a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.

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