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MFG:APT  Package Cooled:SOT-227  D/C:`06+(pb-free)  

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Part Number: APT39M60J

 

MFG: APT

Package Cooled: SOT-227

D/C: `06+(pb-free)

Description: Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary pla...


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APT39M60J General Description


Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

APT39M60J Maximum Ratings

Symbol Parameter Ratings Unit
ID Continuous Drain Current @ TC = 25°C 39 A
Continuous Drain Current @ TC = 100°C 24
IDM Pulsed Drain Current 1 210
VGS Gate-Source Voltage ±30 V
EAS Single Pulse Avalanche Energy 2 1580 mJ
IAR Avalanche Current, Repetitive or Non-Repetitive 28 A

APT39M60J Features

• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant

APT39M60J Typical Application

• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters

APT39M60J datasheet

APT39M60J
PDF/DataSheet Download

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