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APT4012BVR

Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular TO-247 PackageSpecifications Symbol Parameter APT4012BVR UNIT VDSS Drain-Source Voltage 300 Volts ID Continuous Drain Current @ TC = 25 37 Amps IDM Pulsed Drain C...

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SeekIC No. : 004287320 Detail

APT4012BVR: Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular TO-247 PackageSpecifications Symbol Parameter APT4012BVR UNIT VDSS Drain-Source Vo...

APT4012BVR Data Sheet

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Part Number:
APT4012BVR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package


Specifications

Symbol Parameter APT4012BVR
UNIT
VDSS Drain-Source Voltage
300
Volts
ID Continuous Drain Current @ TC = 25
37
Amps
IDM Pulsed Drain Current
148
VGS Gate-Source Voltage Continuous
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
370
Watts
Linear Derating Factor
2.96
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-Repetitive)
337
Amps
EAR Repetitive Avalanche Energy
30
mJ
EAS Single Pulse Avalanche Energy
1300



Description

Power MOS V® APT4012BVR  is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.




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