FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25° C: 44A
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
Series: POWER MOS V®
Gate Charge (Qg) @ Vgs: 470nC @ 10V
Input Capacitance (Ciss) @ Vds: 8900pF @ 25V
Power - Max: 450W
Specifications
| Symbol |
Parameter |
APT5010JVR |
UNIT |
| VDSS |
Drain-Source Voltage |
500 |
Volts |
| ID |
Continuous Drain Current @ TC = 25°C |
44 |
Amps |
| IDM |
Pulsed Drain Current |
176 |
| VGS |
Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM |
Gate-Source Voltage Transient |
±40 |
| PD |
Total Power Dissipation @ TC = 25°C |
450 |
Watts |
| Linear Derating Factor |
3.6 |
W/°C |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
-55 to 150 |
°C |
| TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
300 |
| IAR |
Avalanche Current(Repetitive and Non-Repetitive) |
44 |
Amps |
| EAR |
Repetitive Avalanche Energy |
50 |
mJ |
| EAS |
Single Pulse Avalanche Energy |
2500 |
DescriptionThe APT5010JVR is one member of the APT5010 family which is designed as the new generation of high voltage N-Channel enhancement mode power MOSFET. This device has four points of features:(1)faster switching; (2)100% avalanche tested; (3)lower leakage; (4)popular SOT-227 package.
The absolute maximum ratings of the APT5010JVR can be summarized as:(1)Drain-Source Voltage: 500 V;(2)Continuous Drain Current @ TC = 25°C: 44 A;(3)Pulsed Drain Current: 176 A;(4)Gate-Source Voltage Continuous: +/- 30 V;(5)Gate-Source Voltage Transient: +/- 40 V;(6)Total Power Dissipation @ TC = 25°C: 450 W;(7)Linear Derating Factor: 3.6 W/°C;(8)Operating and Storage Junction Temperature Range: -55 to 150 °C;(9)Lead Temperature: 0.063" from Case for 10 Sec: 300 °C;(10)Repetitive Avalanche Energy: 50 mJ.
The electrical characteristics of the APT5010JVR can be summarized as:(1)Drain-Source Breakdown Voltage: 500 V;(2)On State Drain Current: 44 A;(3)Drain-Source On-State Resistance: 0.100 Ohms. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Parameters: | Technical/Catalog Information | APT5010JVR |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 44A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 8900pF @ 25V |
| Power - Max | 450W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 470nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT5010JVR
APT5010JVR
|
APT5010JVR Data Sheet
