Purchase APT5017SLC, In-stock APT5017SLC From SeekIC.
MFG:APT D/C:`06+(pb-free)
Part Number: APT5017SLC
MFG: APT
D/C: `06+(pb-free)
Description: Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement m...
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APT5017SLC
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DataSheet
General Description
APT5017SLC General Description
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,delivers exceptionally fast switching speeds.
APT5017SLC Maximum Ratings
| Symbol | Parameter |
APT5017 |
UNIT |
| VDSS | Drain-Source Voltage |
500 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
30 |
Amps |
| IDM | Pulsed Drain Current |
120 | |
| VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
370 |
Watts |
| Linear Derating Factor |
3.96 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-Repetitive) |
30 |
Amps |
| EAR | Repetitive Avalanche Energy |
30 |
mJ |
| EAS | Single Pulse Avalanche Energy |
1300 |
APT5017SLC Features
• Identical Specifications: TO-247 or Surface Mount D3PAK Package
• Lower Gate Charge & Capacitance
• Easier To Drive
• 100% Avalanche Tested
• Faster switching
• Lower Gate Charge & Capacitance
• Easier To Drive
• 100% Avalanche Tested
• Faster switching
APT5017SLC
PDF/DataSheet Download
- Datasheet: APT5017SLC
- File Size: 36623 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
- 36626 KB
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
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