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MFG:APT  Package Cooled:TO-3PL  D/C:05+  

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APT Series Datasheet download

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Part Number: APT5020BLC

 

MFG: APT

Package Cooled: TO-3PL

D/C: 05+

Description: Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement m...


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APT5020BLC General Description


Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,delivers exceptionally fast switching speeds.

APT5020BLC Maximum Ratings

Symbol Parameter
APT5020
UNIT
VDSS Drain-Source Voltage
500
Volts
ID Continuous Drain Current @ TC = 25
26
Amps
IDM Pulsed Drain Current
104
VGS Gate-Source Voltage Continuous
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
300
Watts
Linear Derating Factor
2.4
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-Repetitive)
26
Amps
EAR Repetitive Avalanche Energy
30
mJ
EAS Single Pulse Avalanche Energy
1300

APT5020BLC Features

• Identical Specifications: TO-247 or Surface Mount D3PAK Package
• Lower Gate Charge & Capacitance
• Easier To Drive
• 100% Avalanche Tested
• Faster switching

APT5020BLC datasheet

APT1001
PDF/DataSheet Download

Find APT5020BLC Suppliers

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  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3  
  • 214276 KB
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  • ·APT1001R1AVR
  • ADPOW [Advanced Power Technology] 
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  • APT1001R1AVR Datasheet Download
  • ·APT1001R1BN
  • ADPOW [Advanced Power Technology] 
  • N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 
  • 53353 KB
  • APT1001R1BN Datasheet Download
  • ·APT1001R1BVFR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 
  • 72323 KB
  • APT1001R1BVFR Datasheet Download
  • ·APT1001R1DN
  •  
  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP  
  • 395046 KB
  • APT1001R1DN Datasheet Download
  • ·APT1001R1HN
  •  
  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO  
  • 227320 KB
  • APT1001R1HN Datasheet Download
  • ·APT1001R1HVR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 
  • 68546 KB
  • APT1001R1HVR Datasheet Download
  • ·APT1001R1SN
  •  
  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB  
  • 247344 KB
  • APT1001R1SN Datasheet Download

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