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Part Number: APT5022AVR

 

MFG: APT

 

D/C: `06+(pb-free)

Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE...


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APT5022AVR General Description


Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT5022AVR Maximum Ratings

Symbol Parameter
APT5022AVR
UNIT
VDSS Drain-Source Voltage
500
Volts
ID Continuous Drain Current @ TC = 25
21
Amps
IDM Pulsed Drain Current
84
VGS Gate-Source Voltage Continuous
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
235
Watts
Linear Derating Factor
1.88
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-Repetitive)
21
Amps
EAR Repetitive Avalanche Energy
30
mJ
EAS Single Pulse Avalanche Energy
1300

APT5022AVR Features

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-3 Package

APT5022AVR datasheet

APT5022AVR
PDF/DataSheet Download

  • Datasheet: APT5022AVR
  • File Size: 60216 KB
  • Manufacturer: ADPOW [Advanced Power Technology]
  • Click here to Download

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