Purchase APT5024BVFR, In-stock APT5024BVFR From SeekIC.
MFG:APT Package Cooled:TO-3P D/C:08+
- Table of contents:
APT5024BVFR
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Suppliers
DataSheet
General Description
APT5024BVFR Maximum Ratings
| Symbol | Parameter | APT30M70BVFR | UNIT |
| VDSS | Drain-Source Voltage | 500 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 22 | Amps |
| IDM | Pulsed Drain Current | 88 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 280 | Watts |
| Linear Derating Factor | 2.24 | W/°C | |
| TJ ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 22 | Amps |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| EAS | Single Pulse Avalanche Energy | 1210 |
APT5024BVFR Features
• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package
• Faster Switching
APT5024BVFR
PDF/DataSheet Download
- Datasheet: APT5024BVFR
- File Size: 63311 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
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- ·APT1001R1BN
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- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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- ·APT1001R1BVFR
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- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
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- ·APT1001R1HN
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- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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