APT5028BVR Selling Leads, Price trend, APT5028BVR DataSheet download, circuit diagram from SeekIC.com

Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular TO-247 PackageSpecifications Symbol Parameter APT5028BVR UNIT VDSS Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25 20 Amps IDM Pulsed Drain...

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SeekIC No. : 004287393 Detail

APT5028BVR: Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular TO-247 PackageSpecifications Symbol Parameter APT5028BVR UNIT VDSS Drain-Source ...

APT5028BVR Data Sheet

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Part Number:: APT5028BVR
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/5/3

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Recent History
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Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
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US $5.7 - 10.44 / Piece

MOSFET N-CH 500V 46A T-MAX
APT5010B2LL evaluate
Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...

Product Details

Description

Features:

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package

Specifications

Symbol	Parameter	APT5028BVR	UNIT
V_DSS	Drain-Source Voltage	500	Volts
I_D	Continuous Drain Current @ T_C = 25	20	Amps
I_DM	Pulsed Drain Current	80	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25	250	Watts
P_D	Linear Derating Factor	2	W/
T_J,T_STG	Operating and StorageTemperature Range	-55 to 150
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300
I_AR	Avalanche Current(Repetitive and Non-Repetitive)	20	Amps
E_AR	Repetitive Avalanche Energy	30	mJ
E_AS	Single Pulse Avalanche Energy	960	mJ

Description

Power MOS V^® APT5028BVR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V^® also achieves faster switching speeds through optimized gate layout.

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APT5028BVR

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