APT50GF120JRDQ3

Configuration: Single
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
Voltage - Collector Emitter Breakdown (Max): 1200V
Series: -
Manufacturer: Microsemi Power Products Group
Package / Case: ISOTOP
Supplier Device Package: ISOTOP?
IGBT Type: NPT
Current - Collector Cutoff (Max): 750µA
Current - Collector (Ic) (Max): 120A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
Input Capacitance (Cies) @ Vce: 5.32nF @ 25V
Power - Max: 521W


Features:

• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• RBSOA and SCSOA Rated
• Ultra Low Leakage Current
• Ultrafast Soft Recovery Anti-parallel Diode


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage	1200	Volts
VGE	Gate-Emitter Voltage	± 30	Volts
IC	Continuous Collector Current @ TC = 25°C	120	Amps
IC	Continuous Collector Current @ TC = 110°C	64	Amps
ICM	Pulsed Collector Current 1	225	Amps
SSOA	Switching Safe Operating Area @ TJ = 150°C	150A @ 1200V
PD	Total Power Dissipation	521	Watts
TL	Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.	300	°C
Tj Tstg	Operating and Storage Junction Temperature Range	-55 to 150	°C

Description

The Fast IGBT APT50GF120JRDQ3 is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.

Parameters:

Technical/Catalog Information	APT50GF120JRDQ3
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	120A
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 75A
Power - Max	521W
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT50GF120JRDQ3 APT50GF120JRDQ3 APT50GF120JRDQ3MI ND APT50GF120JRDQ3MIND APT50GF120JRDQ3MI