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MFG:Microsemi-PPG Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

Descriptions: IGBT 1200V 106A TO-264

Price Break

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25
100
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1000
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10000

Unit Price

20.58000
17.64000
13.96500
12.86250
11.02500
9.92250
9.18750

Extended Price

20.58
441.00
1396.50
6431.25
11025.00
49612.50
91875.00

(All prices are in USD) Prices for reference only

IGBT 1200V 106A TO-264

Technical/Catalog Information	APT50GT120LRDQ2G
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	106A
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 50A
Power - Max	694W
Mounting Type	Through Hole
Package / Case	TO-264
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT50GT120LRDQ2G APT50GT120LRDQ2G APT50GT120LRDQ2GMI ND APT50GT120LRDQ2GMIND APT50GT120LRDQ2GMI

APT1001
PDF/DataSheet Download

·APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
214276 KB
·APT1001R1AVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
69982 KB
·APT1001R1BN
ADPOW [Advanced Power Technology]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
53353 KB
·APT1001R1BVFR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
72323 KB
·APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
395046 KB
·APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
227320 KB
·APT1001R1HVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
68546 KB
·APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
247344 KB

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