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MFG:APT


Part Number: APT50M50JFLL
MFG: APT
Description: Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mod...
MFG:APT


MFG: APT
Description: Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mod...
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Symbol | Parameter | APT5010JFLL | UNIT |
| VDSS | Drain-Source Voltage | 500 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 71 | Amps |
| IDM | Pulsed Drain Current |
284 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 595 | Watts |
| Linear Derating Factor | 4.76 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitve and Non-Repetitive) |
71 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 3200 |
· Lower Input Capacitance
·Increased Power Dissipation
· Lower Miller Capacitance
· Easier To Drive
· Lower Gate Charge, Qg
· Popular SOT-227 Package
APT50M50JFLL
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