APT50M75JFLL

MOSFET N-CH 500V 51A SOT-227

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SeekIC No. : 004131005 Detail

APT50M75JFLL: MOSFET N-CH 500V 51A SOT-227

floor Price/Ceiling Price

US $ 12.59~20.99 / Piece | Get Latest Price
Part Number:
APT50M75JFLL
Mfg:
Supply Ability:
5000

Price Break

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  • 100~250
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  • Unit Price
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  • $19.41
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  • $13.22
  • $12.85
  • $12.59
  • Processing time
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Upload time: 2024/3/27

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25° C: 51A
Interface Type : Ethernet, I2C, SPI, UART, USB Rds On (Max) @ Id, Vgs: 75 mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 125nC @ 10V
Input Capacitance (Ciss) @ Vds: 5590pF @ 25V Power - Max: 460W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 500V
Manufacturer: Microsemi Power Products Group
Current - Continuous Drain (Id) @ 25° C: 51A
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP?
Power - Max: 460W
Series: POWER MOS 7®
Rds On (Max) @ Id, Vgs: 75 mOhm @ 25.5A, 10V
Gate Charge (Qg) @ Vgs: 125nC @ 10V
Input Capacitance (Ciss) @ Vds: 5590pF @ 25V


Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package



Specifications

All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APT5010JFLL UNIT
VDSS Drain-Source Voltage 500 Volts
ID Continuous Drain Current @ TC = 25°C 52 Amps
IDM Pulsed Drain Current
208
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25°C 480 Watts
Linear Derating Factor 3.84 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 °C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR Avalanche Current
(Repetitve and Non-Repetitive)
52 Amps
EAR Repetitive Avalanche Energy 50 mJ
EAS Single Pulse Avalanche Energy 2500



Description

Power MOS 7TM APT50M75JFLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's  patented metal gate structure.




Parameters:

Technical/Catalog InformationAPT50M75JFLL
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C51A
Rds On (Max) @ Id, Vgs75 mOhm @ 25.5A, 10V
Input Capacitance (Ciss) @ Vds 5590pF @ 25V
Power - Max460W
PackagingTube
Gate Charge (Qg) @ Vgs125nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT50M75JFLL
APT50M75JFLL



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