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APT50M80B2VRG

MOSFET N-CH 500V 58A T-MAX

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SeekIC No. : 003430363 Detail

APT50M80B2VRG: MOSFET N-CH 500V 58A T-MAX

APT50M80B2VRG Data Sheet

floor Price/Ceiling Price

US $ 11.65~11.65 / Piece | Get Latest Price
Part Number:
APT50M80B2VRG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~30
  • Unit Price
  • $11.65
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: POWER MOS V® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 500V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 58A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 80 mOhm @ 29A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) @ Vgs: 423nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 8797pF @ 25V
Power - Max: 625W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX? [B2]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 58A
Manufacturer: Microsemi Power Products Group
Power - Max: 625W
Series: POWER MOS V®
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 80 mOhm @ 29A, 10V
Gate Charge (Qg) @ Vgs: 423nC @ 10V
Input Capacitance (Ciss) @ Vds: 8797pF @ 25V


Parameters:

Technical/Catalog InformationAPT50M80B2VRG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C58A
Rds On (Max) @ Id, Vgs80 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds 8797pF @ 25V
Power - Max625W
PackagingTube
Gate Charge (Qg) @ Vgs423nC @ 10V
Package / CaseT-MAX
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT50M80B2VRG
APT50M80B2VRG



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