MFG:APT Package Cooled:ISOTOP?/FONT> D/C:`06+(pb-free)
MFG: APT
Package Cooled: ISOTOP?/FONT>
D/C: `06+(pb-free)
Description: Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode pow...
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Symbol | Parameter | APT5010JFLL | UNIT |
| VDSS | Drain-Source Voltage | 600 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 39 | Amps |
| IDM | Pulsed Drain Current |
156 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 460 | Watts |
| Linear Derating Factor | 3.68 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitve and Non-Repetitive) |
39 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 2500 |
APT6013JFLL
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MOSFET N-CH 600V 43A T-MAX
Power MOS 7TM APT6013B2LL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower co...
MOSFET N-CH 600V 43A T-MAX
Power MOS 7TM APT6013B2FLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower c...
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