APT6015LVRG

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 600V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 38A
Power - Max: 520W
Manufacturer: Microsemi Power Products Group
Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V
Package / Case: TO-264-3, TO-264AA
Series: POWER MOS V®
Input Capacitance (Ciss) @ Vds: 9000pF @ 25V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) @ Vgs: 475nC @ 10V


Parameters:

Technical/Catalog Information	APT6015LVRG
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	38A
Rds On (Max) @ Id, Vgs	150 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	9000pF @ 25V
Power - Max	520W
Packaging	Tube
Gate Charge (Qg) @ Vgs	475nC @ 10V
Package / Case	TO-264
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT6015LVRG APT6015LVRG