Purchase APT8030JN, In-stock APT8030JN From SeekIC.
MFG:APT D/C:1MOS: 27A800V
- Table of contents:
APT8030JN
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Suppliers
DataSheet
General Description
APT8030JN Maximum Ratings
|
Symbol |
Parameter |
APT8030JN |
APT8035JN |
UNIT |
|
VDSS |
Drain-Source Voltage |
800
|
800 |
Volts |
|
ID |
Continuous Drain Current @ TC = 25°C |
27 |
25 |
Amps
|
|
IDM,ILM |
Pulsed Drain Current and Inductive Current Clamped |
108 |
100 | |
|
VGS |
Gate-Source Voltage Continuous |
±30 |
Volts | |
|
PD |
Total Power Dissipation @ TC = 25°C |
520 |
Watts | |
| Linear Derating Factor |
4.16 |
W/°C | ||
|
TJ,TSTG |
Operating and Storage Junction Temperature Range |
-55 to 150 |
°C | |
|
TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
300 | ||
APT8030JN
PDF/DataSheet Download
- Datasheet: APT8030JN
- File Size: 56080 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
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- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
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- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
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