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MFG:APT D/C:`06+(pb-free)
- Table of contents:
APT8065AVR
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Suppliers
DataSheet
General Description
APT8065AVR Maximum Ratings
| Symbol |
Parameter |
APT50M80JLC | UNIT |
VDSS |
Drain-Source Voltage |
800 | Volts |
| ID | Continuous Drain Current @ TC = 25°C |
11.5 | Amps |
| IDM | Pulsed Drain Current |
46 | |
| VGS | Gate-Source Voltage Continuous |
±30 | Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25°C |
200 | Watts |
Linear Derating Factor |
1.6 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range |
-55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
11.5 | Amps |
| EAR | Repetitive Avalanche Energy |
30 | mJ |
| EAS | Single Pulse Avalanche Energy |
1210 |
APT8065AVR
PDF/DataSheet Download
- Datasheet: APT8065AVR
- File Size: 62275 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
- 36626 KB
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
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