Purchase APT80GP60B2, In-stock APT80GP60B2 From SeekIC.
MFG:APT Package Cooled:T-MAX?[B2] D/C:`06+(pb-free)
Part Number: APT80GP60B2
MFG: APT
Package Cooled: T-MAX?[B2]
D/C: `06+(pb-free)
- Table of contents:
APT80GP60B2
-
Suppliers
DataSheet
General Description
APT80GP60B2 Maximum Ratings
| Symbol |
Parameter |
APT80GP60B2 |
UNIT |
VCES |
Collector-Emitter Voltage |
600 |
Volts |
VGE |
Gate-Emitter Voltage |
±20 | |
VGEM |
Gate-Emitter Voltage Transient |
±30 | |
| IC1 |
Continuous Collector Current 7 @ TC = 25°C |
100 | Amps |
IC2 |
Continuous Collector Current 7 @ TC = 110°C |
100 | |
ICM |
Pulsed Collector Current 1 @ TC = 25°C |
330 | |
SSOA |
Switching Safe Operating Area @ TJ = 150°C |
330A @ 600V |
|
| PD |
Total Power Dissipation |
1041 |
Watts |
TJ,TSTG |
Operating and Storage Junction Temperature Range |
-55 to 150 |
°C |
TL |
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. |
300 |
APT80GP60B2
PDF/DataSheet Download
- Datasheet: APT80GP60B2
- File Size: 97276 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
- 36626 KB
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
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