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MFG:Microsemi-PPG Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

Descriptions: IGBT 600V 100A T-MAX

Price Break

1
25
100
500
1000
5000
10000

Unit Price

25.05000
20.69120
17.42400
15.24600
14.15700
13.61250
13.06800

Extended Price

25.05
517.28
1742.40
7623.00
14157.00
68062.50
130680.00

(All prices are in USD) Prices for reference only

IGBT 600V 100A T-MAX

Technical/Catalog Information	APT80GP60B2G
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	100A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 80A
Power - Max	1041W
Mounting Type	Through Hole
Package / Case	T-MAX
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT80GP60B2G APT80GP60B2G APT80GP60B2GMI ND APT80GP60B2GMIND APT80GP60B2GMI

APT1001
PDF/DataSheet Download

·APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
214276 KB
·APT1001R1AVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
69982 KB
·APT1001R1BN
ADPOW [Advanced Power Technology]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
53353 KB
·APT1001R1BVFR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
72323 KB
·APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
395046 KB
·APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
227320 KB
·APT1001R1HVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
68546 KB
·APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
247344 KB

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