APTC80DDA29T3G

MOSFET MOD DUAL BOOST CHOP SP3

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SeekIC No. : 004130846 Detail

APTC80DDA29T3G: MOSFET MOD DUAL BOOST CHOP SP3

floor Price/Ceiling Price

US $ 25.8~25.8 / Piece | Get Latest Price
Part Number:
APTC80DDA29T3G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~21
  • Unit Price
  • $25.8
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: 2 N-Channel (Dual) FET Feature: Standard
Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25° C: 15A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) @ Vds: 2254pF @ 25V
Power - Max: 156W Package / Case : PGBA-516
Mounting Type: Chassis Mount Package / Case: SP3
Supplier Device Package: SP3    

Description

Series: -
FET Feature: Standard
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Packaging: Bulk
Drain to Source Voltage (Vdss): 800V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Package / Case: SP3
Supplier Device Package: SP3
FET Type: 2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25° C: 15A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
Gate Charge (Qg) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) @ Vds: 2254pF @ 25V
Power - Max: 156W


Features:

  Connection Diagram
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration



Application

• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction



Specifications

Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 800 V
ID Continuous Drain Current Tc = 25°C
Tc = 80°C
15
11
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
60
±30
290
A
V
mΩ
PD Maximum Power Dissipation Tc = 25°C 156 W
IAR
EAR
EAS
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
17
0.5
670
A

mJ



Parameters:

Technical/Catalog InformationAPTC80DDA29T3G
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APTC80DDA29T3G
APTC80DDA29T3G



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