Features: • Fast Trench + Field Stop IGBT® Technology- Low voltage drop- Low tail current- Switching frequency up to 20 kHz- Soft recovery parallel diodes- Low diode VF- Low leakage current- Avalanche energy rated- RBSOA and SCSOA rated• Kelvin emitter for easy drive• Very lo...
APTGT75H120T: Features: • Fast Trench + Field Stop IGBT® Technology- Low voltage drop- Low tail current- Switching frequency up to 20 kHz- Soft recovery parallel diodes- Low diode VF- Low leakage curren...
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| VCES | Collector - Emitter Breakdown Voltage | 1200 | V | |
| IC | Continuous Collector Current | TC = 25°C | 110 | A |
| TC = 80°C | 75 | |||
| ICM | Pulsed Collector Current | TC = 25°C | 175 | |
| VGE | Gate Emitter Voltage | ±20 | V | |
| PD | Maximum Power Dissipation | TC = 25°C | 357 | W |
| RBSOA | Reverse Bias Safe Operating Area | TJ = 150°C | 150A @ 1150V | |