APTGT75H120TG

IGBT MOD TRENCH FULL BRIDGE SP4

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SeekIC No. : 004131370 Detail

APTGT75H120TG: IGBT MOD TRENCH FULL BRIDGE SP4

floor Price/Ceiling Price

US $ 67.34~67.34 / Piece | Get Latest Price
Part Number:
APTGT75H120TG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10
  • Unit Price
  • $67.34
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
IGBT Type: Trench and Field Stop Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Interface Type : I2C, UART, SPI Current - Collector (Ic) (Max): 110A
Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
Power - Max: 357W Input: Standard
NTC Thermistor: Yes Mounting Type: Chassis Mount
Package / Case: SP4    

Description

Input: Standard
Mounting Type: Chassis Mount
Voltage - Collector Emitter Breakdown (Max): 1200V
Series: -
Manufacturer: Microsemi Power Products Group
IGBT Type: Trench and Field Stop
Current - Collector Cutoff (Max): 250µA
NTC Thermistor: Yes
Package / Case: SP4
Supplier Device Package: SP4
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
Current - Collector (Ic) (Max): 110A
Power - Max: 357W


Features:

• Fast Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring



Application

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control



Specifications

VCES Collector - Emitter Breakdown Voltage 1200 V
IC Continuous Collector Current TC = 25°C 110 A
TC = 80°C 75
ICM Pulsed Collector Current TC = 25°C 175
VGE Gate Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 357 W
RBSOA Reverse Bias Safe Operating Area TJ = 150°C 150A @ 1150V  



Parameters:

Technical/Catalog InformationAPTGT75H120TG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APTGT75H120TG
APTGT75H120TG



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