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APTM100A13D

Features: • Power MOS 7® MOSFETs- Low RDSon- Low input and Miller capacitance- Low gate charge- Fast intrinsic reverse diode- Avalanche energy rated- Very rugged• Kelvin source for easy drive• Very low stray inductance- Symmetrical design- M5 power connectors• High leve...

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SeekIC No. : 004287607 Detail

APTM100A13D: Features: • Power MOS 7® MOSFETs- Low RDSon- Low input and Miller capacitance- Low gate charge- Fast intrinsic reverse diode- Avalanche energy rated- Very rugged• Kelvin source for e...

APTM100A13D Data Sheet

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Part Number:
APTM100A13D
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Features:

• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration


Application

• Zero Current Switching resonant mode


Specifications

Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 1000 V
ID Continuous Drain Current Tc = 25°C 65 A
Tc = 85°C 49
IDM Pulsed Drain current 240
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 130 m
PD Maximum Power Dissipation Tc = 25°C 1250 W
IAR Avalanche current (repetitive and non repetitive) 24 A
EAR Repetitive Avalanche Energy 30 mJ
EAS Single Pulse Avalanche Energy 1300



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