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APTM100H45SCTG

MOSFET 4N CH 1000V 18A SP4

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SeekIC No. : 004130708 Detail

APTM100H45SCTG: MOSFET 4N CH 1000V 18A SP4

APTM100H45SCTG Data Sheet

floor Price/Ceiling Price

US $ 128.75~155.57 / Piece | Get Latest Price
Part Number:
APTM100H45SCTG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $155.57
  • $147.53
  • $139.48
  • $136.8
  • $134.11
  • $128.75
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25° C: 18A
Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) @ Vds: 4350pF @ 25V
Package / Case : PGBA-516 Power - Max: 357W
Mounting Type: Chassis Mount Package / Case: SP4
Supplier Device Package: SP4    

Description

FET Feature: Standard
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25° C: 18A
FET Type: 4 N-Channel (H-Bridge)
Power - Max: 357W
Package / Case: SP4
Supplier Device Package: SP4
Packaging: Bulk
Series: POWER MOS 7®
Gate Charge (Qg) @ Vgs: 154nC @ 10V
Input Capacitance (Ciss) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V


Parameters:

Technical/Catalog InformationAPTM100H45SCTG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APTM100H45SCTG
APTM100H45SCTG



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