APTM100H80FT1G

MOSFET MODULE FULL BRIDGE SP1

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SeekIC No. : 004130710 Detail

APTM100H80FT1G: MOSFET MODULE FULL BRIDGE SP1

floor Price/Ceiling Price

US $ 34.85~34.85 / Piece | Get Latest Price
Part Number:
APTM100H80FT1G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~15
  • Unit Price
  • $34.85
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25° C: 11A
Rds On (Max) @ Id, Vgs: 960 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) @ Vds: 3876pF @ 25V
Power - Max: 208W Package / Case : PGBA-516
Mounting Type: Chassis Mount Package / Case: SP1
Supplier Device Package: SP1    

Description

Series: -
FET Feature: Standard
Mounting Type: Chassis Mount
Gate Charge (Qg) @ Vgs: 150nC @ 10V
Manufacturer: Microsemi Power Products Group
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 4 N-Channel (H-Bridge)
Packaging: Bulk
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: SP1
Supplier Device Package: SP1
Power - Max: 208W
Current - Continuous Drain (Id) @ 25° C: 11A
Rds On (Max) @ Id, Vgs: 960 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds: 3876pF @ 25V


Parameters:

Technical/Catalog InformationAPTM100H80FT1G
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APTM100H80FT1G
APTM100H80FT1G



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