APTM100SK33T1G

MOSFET N-CH 1000V 23A SP1

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SeekIC No. : 004130712 Detail

APTM100SK33T1G: MOSFET N-CH 1000V 23A SP1

floor Price/Ceiling Price

US $ 28.05~28.05 / Piece | Get Latest Price
Part Number:
APTM100SK33T1G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~20
  • Unit Price
  • $28.05
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25° C: 23A
Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) @ Vds: 7868pF @ 25V
Power - Max: 390W Package / Case : PGBA-516
Mounting Type: Chassis Mount Package / Case: SP1
Supplier Device Package: SP1    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Drain to Source Voltage (Vdss): 1000V (1kV)
Packaging: Bulk
Gate Charge (Qg) @ Vgs: 305nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 23A
Package / Case: SP1
Supplier Device Package: SP1
Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds: 7868pF @ 25V
Power - Max: 390W


Parameters:

Technical/Catalog InformationAPTM100SK33T1G
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C23A
Rds On (Max) @ Id, Vgs396 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 7868pF @ 25V
Power - Max390W
PackagingBulk
Gate Charge (Qg) @ Vgs305nC @ 10V
Package / CaseSP1 Module
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APTM100SK33T1G
APTM100SK33T1G



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